<?xml version="1.0" encoding="utf-8" ?> <rss version="2.0" xmlns:opensearch="http://a9.com/-/spec/opensearch/1.1/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:atom="http://www.w3.org/2005/Atom"> <channel> <title> <![CDATA[Bibliotecas de la UNNE Search for 'an:211718']]> </title> <link> http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-search.pl?idx=&#38;q=an%3A211718&#38;sort_by=relevance&#38;format=rss </link> <atom:link rel="self" type="application/rss+xml" href="http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-search.pl?idx=&#38;q=an%3A211718&#38;sort_by=relevance&#38;format=rss"/> <description> Search results for 'an:211718' at Bibliotecas de la UNNE </description> <opensearch:totalResults>2</opensearch:totalResults> <opensearch:startIndex>0</opensearch:startIndex> <opensearch:itemsPerPage>50</opensearch:itemsPerPage> <atom:link rel="search" type="application/opensearchdescription+xml" href="http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-search.pl?idx=&#38;q=an%3A211718&#38;sort_by=relevance&#38;format=opensearchdescription"/> <opensearch:Query role="request" searchTerms="idx%3D%26q%3Dan%253A211718" startPage="" /> <item> <title> Depenndency of metastable defect density on illumination time in hydrogenated amorphous silicon </title> <dc:identifier>ISBN:</dc:identifier> <link>http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-detail.pl?biblionumber=275064</link> <description> <p> By Schumidt, J. a..<br /> .<br /> 6 páginas </p> <p> <a href="http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-reserve.pl?biblionumber=275064">Place hold on <em>Depenndency of metastable defect density on illumination time in hydrogenated amorphous silicon</em></a> </p> </description> <guid>http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-detail.pl?biblionumber=275064</guid> </item> <item> <title> Amorphous silicon carbide films prepared by PECVD under hydrogen dilution and high excitation frequency </title> <dc:identifier>ISBN:</dc:identifier> <link>http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-detail.pl?biblionumber=275067</link> <description> <p> By Arce, R..<br /> .<br /> 6 páginas </p> <p> <a href="http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-reserve.pl?biblionumber=275067">Place hold on <em>Amorphous silicon carbide films prepared by PECVD under hydrogen dilution and high excitation frequency</em></a> </p> </description> <guid>http://bibliotecas.unne.edu.ar/cgi-bin/koha/opac-detail.pl?biblionumber=275067</guid> </item> </channel> </rss>
